JPS6064481A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS6064481A JPS6064481A JP58173835A JP17383583A JPS6064481A JP S6064481 A JPS6064481 A JP S6064481A JP 58173835 A JP58173835 A JP 58173835A JP 17383583 A JP17383583 A JP 17383583A JP S6064481 A JPS6064481 A JP S6064481A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- main surface
- type
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58173835A JPS6064481A (ja) | 1983-09-19 | 1983-09-19 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58173835A JPS6064481A (ja) | 1983-09-19 | 1983-09-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6064481A true JPS6064481A (ja) | 1985-04-13 |
JPH0516196B2 JPH0516196B2 (en]) | 1993-03-03 |
Family
ID=15968035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58173835A Granted JPS6064481A (ja) | 1983-09-19 | 1983-09-19 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6064481A (en]) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63126243A (ja) * | 1986-11-17 | 1988-05-30 | Toshiba Corp | 集積回路素子及びその製造方法 |
JPH04125023A (ja) * | 1990-09-14 | 1992-04-24 | Fuji Electric Co Ltd | Gtoインバータのアーム短絡検出回路 |
JP2005259775A (ja) * | 2004-03-09 | 2005-09-22 | Oki Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49127576A (en]) * | 1973-04-05 | 1974-12-06 | ||
JPS5146880A (en) * | 1974-10-18 | 1976-04-21 | Matsushita Electronics Corp | Toranjisuta |
JPS55115340A (en) * | 1979-02-26 | 1980-09-05 | Hitachi Ltd | Semiconductor device |
JPS56103460A (en) * | 1980-01-21 | 1981-08-18 | Mitsubishi Electric Corp | Semiconductor device |
JPS56112752A (en) * | 1980-02-12 | 1981-09-05 | Nec Corp | Semiconductor device |
JPS572567A (en) * | 1980-06-06 | 1982-01-07 | Nec Corp | Semiconductor device |
JPS577956A (en) * | 1980-06-17 | 1982-01-16 | Mitsubishi Electric Corp | Semiconductor device |
JPS5720476A (en) * | 1980-07-10 | 1982-02-02 | Mitsubishi Electric Corp | Diode |
JPS57169273A (en) * | 1981-04-13 | 1982-10-18 | Nippon Denso Co Ltd | Semiconductor device |
JPS5856352A (ja) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | 半導体集積回路 |
-
1983
- 1983-09-19 JP JP58173835A patent/JPS6064481A/ja active Granted
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49127576A (en]) * | 1973-04-05 | 1974-12-06 | ||
JPS5146880A (en) * | 1974-10-18 | 1976-04-21 | Matsushita Electronics Corp | Toranjisuta |
JPS55115340A (en) * | 1979-02-26 | 1980-09-05 | Hitachi Ltd | Semiconductor device |
JPS56103460A (en) * | 1980-01-21 | 1981-08-18 | Mitsubishi Electric Corp | Semiconductor device |
JPS56112752A (en) * | 1980-02-12 | 1981-09-05 | Nec Corp | Semiconductor device |
JPS572567A (en) * | 1980-06-06 | 1982-01-07 | Nec Corp | Semiconductor device |
JPS577956A (en) * | 1980-06-17 | 1982-01-16 | Mitsubishi Electric Corp | Semiconductor device |
JPS5720476A (en) * | 1980-07-10 | 1982-02-02 | Mitsubishi Electric Corp | Diode |
JPS57169273A (en) * | 1981-04-13 | 1982-10-18 | Nippon Denso Co Ltd | Semiconductor device |
JPS5856352A (ja) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | 半導体集積回路 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63126243A (ja) * | 1986-11-17 | 1988-05-30 | Toshiba Corp | 集積回路素子及びその製造方法 |
JPH04125023A (ja) * | 1990-09-14 | 1992-04-24 | Fuji Electric Co Ltd | Gtoインバータのアーム短絡検出回路 |
JP2005259775A (ja) * | 2004-03-09 | 2005-09-22 | Oki Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0516196B2 (en]) | 1993-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6653740B2 (en) | Vertical conduction flip-chip device with bump contacts on single surface | |
US7772669B2 (en) | Semiconductor device having an improved structure for high withstand voltage | |
US20060223199A1 (en) | Semiconductor device and manufacturing method thereof | |
US7391093B2 (en) | Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film | |
JPH0697469A (ja) | プレーナ接合を有する半導体装置 | |
US11552016B2 (en) | Semiconductor device with metallization structure on opposite sides of a semiconductor portion | |
JP5154000B2 (ja) | 半導体装置 | |
JP2878689B2 (ja) | 高耐圧半導体素子 | |
EP1231635A1 (en) | Method for manufacturing an electronic power device and a diode in a same package | |
US20200273767A1 (en) | Electronic chip package | |
US4884116A (en) | Double diffused mosfet with potential biases | |
JP3432708B2 (ja) | 半導体装置と半導体モジュール | |
CN1862821B (zh) | 半导体器件 | |
JP2996722B2 (ja) | 一体型esd保護を備えたnmos素子 | |
JPS6064481A (ja) | 半導体装置 | |
JP3269536B2 (ja) | 半導体装置 | |
JPH06151573A (ja) | 半導体集積回路装置 | |
JPH0794704A (ja) | 半導体装置 | |
JP3311166B2 (ja) | 絶縁ゲート型半導体装置 | |
JP2005026434A (ja) | 半導体装置 | |
JP2860089B2 (ja) | 高耐圧半導体素子 | |
GB1204805A (en) | Semiconductor device | |
JPH10256542A (ja) | 半導体装置 | |
JPS6112069A (ja) | 半導体装置 | |
JP2782758B2 (ja) | 半導体集積回路 |